Abstract—This
paper introduces a designmethodology for a resonant boost converter topology
that is suitable for operation at very high frequencies. The topology we
examine features a low parts count and fast transient response, but suffers
from higher device stresses compared to other topologies that use a larger
number of passive components.Anumerical design procedure is developed for this
topology that does not rely on time-domain simulation sweeps across parameters.
This allows the optimal converter design to be found for a particular main
semiconductor switch. If an integrated power process is used where the designer
has control over layout of the semiconductor switch, the optimal combination of
converter design and semiconductor layout can be found. To validate the
proposed converter topology and design approach, a 75-MHz prototype converter
is designed and experimentally demonstrated. The performance of the prototype
closely matches that predicted by the design procedure, and the converter
achieves good efficiency over a wide input voltage range.
(Index
Terms—DC-DC power converters, power transistors, RLC circuits, schottky diodes,
tuned circutis.)
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